MOSFET degradation dependence on input signal power in a RF power amplifier
نویسندگان
چکیده
Aging produced by both DC and RF stress is experimentally analyzed on a RF CMOS power amplifier. The selected circuit topology allows observing individual NMOS and PMOS transistors degradations, as well as the aging effect on the circuit functionality. A direct relation between DC and RF (gain) parameters has been observed. NMOS degradation (both in mobility and Vth) is stronger than that of the PMOS, which identifies the NMOS as the main cause of the RF degradation in this circuit.
منابع مشابه
A New Ultra-Wideband Low Noise Amplifier With Continuous Gain Control
This paper presents a new variable gain low noise amplifier (VG-LNA) for ultra-wideband (UWB) applications. The proposed VG-LNA uses a common-source (CS) with a shunt-shunt active feedback as an input stage to realize input matching and partial noise cancelling. An output stage consists of a gain-boosted CS cascode and a gain control circuit that moves the high resonant frequency to higher freq...
متن کاملA Hysteretic Two-phase Supply Modulator for Envelope Tracking RF Power Amplifiers
In this paper a two-phase supply modulator suitable for envelope tracking power amplifier is presented. The designed supply modulator has the linear assisted switching architecture. Two-phase architecture is used in order to reduce the output switching ripples. The proposed architecture uses hysteretic control instead of pulse width modulation (PWM) which significantly reduces the circuit compl...
متن کاملOutput-Conductance Transition-Free Method for Improving Radio-Frequency Linearity of SOI MOSFET Circuits
In this article, a novel concept is introduced to improve the radio frequency (RF) linearity of partially-depleted (PD) silicon-on-insulator (SOI) MOSFET circuits. The transition due to the non-zero body resistance (RBody) in output conductance of PD SOI devices leads to linearity degradation. A relation for RBody is defined to eliminate the transition and a method to obtain transition-free c...
متن کاملTheory and Implementation of RF-Input Outphasing Power Amplification
Conventional outphasing power amplifier systems require both an RF carrier input and a separate baseband input to synthesize a modulated RF output. This work presents an RF-input / RF-output outphasing power amplifier that directly amplifies a modulated RF input, eliminating the need for multiple costly IQ modulators and baseband signal component separation as in previous outphasing systems. An...
متن کاملTwo-Stage Radio Frequency Power Generator-Amplifier Design for a TEM00 CO2 Slab Waveguide Laser
This letter presents the results of the research conducted on the design, construction and test of a two stage radio frequency power generator-amplifier directed adapted to an in-house-built compact CO2 waveguide laser. The main characteristic of this power supply lies in the fact its design is based on MOSFET technology for both the oscillator and the amplifier stages. RF output power is cente...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2017